GT80J101A 2002-01-18 1 toshiba insulated gate bipolar transistor silicon n channel igbt GT80J101A high power switching applications enhancement-mode high speed: t f = 0.40 s (max) (i c = 80 a) low saturation voltage: v ce (sat) = 3.0 v (max) (i c = 80 a) maximum ratings (ta 25c) characteristics symbol rating unit collector-emitter voltage v ces 600 v gate-emitter voltage v ges 20 v dc i c 80 collector current 1ms i cp 160 a collector power dissipation (tc 25c) p c 200 w junction temperature t j 150 c storage temperature t stg 55~150 c screw torque 0.8 n m electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge 25 v, v ce 0 500 na collector cut-off current i ces v ce 600 v, v ge 0 1.0 ma gate-emitter cut-off voltage v ge (off) v ce 5 v, i c 80 ma 3.0 6.0 v v ce (sat) (1) i c 10 a, v ge 15 v 2.0 collector-emitter saturation voltage v ce (sat) (2) i c 80 a, v ge 15 v 2.4 3.0 v input capacitance c ies v ce 10 v, v ge 0, f 1 mhz 5500 pf rise time t r 0.3 0.6 turn-on time t on 0.5 0.8 fall time t f 0.25 0.40 switching time turn-off time t off 0.7 1.0 s thermal resistance r th (j-c) 0.625 c/w unit: mm jedec D jeita D toshiba 2-21f2c weight: 9.75 g (typ.) 15 v 15 v 0 v out v cc 300 v 3.75 v in 33
GT80J101A 2002-01-18 2 collector current i c (a) collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) i c v ce collector current i c (a) gate-emitter voltage v ge (v) v ce v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce v ge gate-emitter voltage v ge (v) i c v ge case temperature tc (c) v ce (sat) tc collector-emitter saturation voltage v ce (sat) (v) 0 0 2 4 6 8 10 20 40 60 80 100 15 20 10 8 6 5 common emitter tc 25 c v ge 4 v 0 0 2 4 6 8 10 4 8 12 16 20 24 10 20 40 60 i c 80 a common emitter tc 40c 0 0 20 40 60 80 100 2 4 6 8 10 12 common emitter v ce 5 v 40 25 tc 125c common emitter v ge 15 v 0 40 1 2 3 4 0 40 80 120 160 i c 10 a 30 50 80 0 0 2 4 6 8 10 4 8 12 16 20 24 10 20 40 60 i c 80 a common emitter tc 25c 0 0 2 4 6 8 10 4 8 12 16 20 24 10 20 40 60 i c 80 a common emitter tc 125c
GT80J101A 2002-01-18 3 0.1 3 0.3 0.5 1 3 5 10 10 5 30 500 50 100 300 t of f t on t r t f common emitter v cc 300 v i c 80 a v gg 15 v tc 25c collector current i c (a) capacitance c (pf) gate charge q g (nc) v ce , v ge q g collector-emitter voltage v ce (v) ( 10 v) gate-emitter voltage v ge (v) gate resistance r g ( ) switching time ? r g switching time ( s) collector current i c (a) switching time ? i c switching time ( s) collector-emitter voltage v ce (v) c v ce collector-emitter voltage v ce (v) safe operating area pulse width t w (s) r th (t) t w transient thermal impedance r th (t) (c/w) 0 0 4 8 12 16 20 80 160 240 320 50 100 v ce 150 v common emitter r l 1.88 tc 25c 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 3 10 2 10 1 10 0 10 1 10 2 tc 25 c common emitter v ge 0 v f 1 mhz tc 25c 50 3 100 300 1000 5000 10000 30000 10 5 50 500 30 100 300 c ies c oes c res 500 3000 1 0.1 0 0.3 0.5 1 3 5 10 20 30 40 50 60 70 80 t of f common emitter v cc 300 v r g 33 v gg 15 v tc 25c t on t f t r 1 1 3 10 30 100 200 * single non-repetitive pulse tc 25c curves must be derated linearly with increase in temperature. 10 s * 1 s * 100 s * i c max (continuous) dc o p eration 10 ms * 1 ms * 3 10 30 100 300 1000 i c max (pulsed)
GT80J101A 2002-01-18 4 collector-emitter voltage v ce (v) reverse bias soa collector current i c (a) 0.1 0 100 200 300 400 500 600 700 0.3 1 3 10 30 300 100 t j 125c v ge 15 v 0 r g 33
GT80J101A 2002-01-18 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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